| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业
SENSOR IC 5CH 5V 5MA SGL 28-SSOP
Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存
Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| BYZ35A22 BYZ35A2206 BYZ35A27 BYZ35A33 BYZ35A37 BYZ |
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
Semikron International
|
| BYZ35A22 BYZ35A2207 BYZ35A47 BYZ35K22 BYZ35K47 |
Silicon-Protectifiers with TVS characteristic - High Temperature Diodes
|
Diotec Semiconductor
|
| MPXV5050V |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
| BYZ50A2207 BYZ50A22 BYZ50A47 BYZ50K22 BYZ50K47 |
Silicon-Protectifiers with TVS characteristic -High Temperature Diodes
|
Diotec Semiconductor
|
| BYZ35A22 BYZ35A2209 BYZ35A27 BYZ35A33 BYZ35A39 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
| GB01SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GB01SHT12-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| MPXHZ6115A MPXHZ6115AC6U MPXAZ6115A MPXAZ6115A6T1 |
Media Resistant and High Temperature Accuracy Integrated Pressure Sensor
Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
CAP 68UF 6V 20% TANT SMD-6032-28 TR-7
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| BYZ50K47 BYZ50A22 BYZ50A27 BYZ50A33 BYZ50A39 BYZ50 |
Precision 1 A regulators
Silicon Protectifiers with TVS characteristics High-temperature diodes
|
DIOTEC SEMICONDUCTOR AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
